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  • 认领成果数 110
  • wos论文数 109
  • wos被引 606
  • wos篇均被引 5.56

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42. [Co/Ni](N)-Based Synthetic Antiferromagnet With Perpendicular Anisotropy and Its Application in Pseudo Spin Valves 代表性成果 SCIE

作者:He, H; Zhang, ZZ; Ma, B; Jin, QY

通讯作者地址:Zhang, ZZ (reprint author), Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China.

作者机构:[He, He; Zhang, Zongzhi; Ma, Bin; Jin, Qingyuan] Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Dept Opt Sci & Engn, Shanghai 200433, Pe 更多

来源:IEEE TRANSACTIONS ON MAGNETICS,2010,46,6,1327-1330

收录类别:SCIE;

当年影响因子:1.243

WOS被引:9

资源类型:外文期刊论文

43. Laser-induced Magnetization Dynamics for L1(0)-FePt Thin Films with Perpendicular Anisotropy 代表性成果 SCIE

作者:Cui, BY; Zhao, JQ; Zhang, ZZ; Ma, B; Jin, QY

通讯作者地址:Zhang, ZZ (reprint author), Fudan Univ, Dept Opt Sci & Engn, Minist Educ, Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peoples R China.

作者机构:[Cui, Boyin; Zhao, Jiaqi; Zhang, Zongzhi; Ma, B.; Jin, Q. Y.] Fudan Univ, Dept Opt Sci & Engn, Minist Educ, Key Lab Micro & Nano Photon Struct, Shangh 更多

来源:JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2010,56,4,1269-1273

收录类别:SCIE;

当年影响因子:0.467

WOS被引:2

资源类型:外文期刊论文

44. Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films 代表性成果 SCIE

作者:Zhang, XH; Ma, B; Zhang, ZZ; Jin, QY

通讯作者地址:Ma, B (reprint author), Fudan Univ, Key Lab Adv Photon Mat & Devices, Adv Mat Lab, Shanghai 200433, Peoples R China.

作者机构:[Ma Bin] Fudan Univ, Key Lab Adv Photon Mat & Devices, Adv Mat Lab, Shanghai 200433, Peoples R China.; Fudan Univ, Dept Opt Sci & Engn, Shanghai 200 更多

来源:CHINESE PHYSICS B,2010,19,10

收录类别:SCIE;

当年影响因子:1.223

WOS被引:1

资源类型:外文期刊论文

51. Dynamic dipolar interaction effect on spin-transfer switching with perpendicular anisotropy 代表性成果 SCIE

作者:Qiu, YC; Zhang, ZZ; Jin, QY; Liu, YW

通讯作者地址:Zhang, ZZ (reprint author), Fudan Univ, Dept Opt Sci & Engn, Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China.

作者机构:[Qiu, Yongcheng; Zhang, Zongzhi; Jin, Q. Y.] Fudan Univ, Dept Opt Sci & Engn, Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China.; [ 更多

来源:APPLIED PHYSICS LETTERS,2009,95,5

收录类别:SCIE;

当年影响因子:3.411

WOS被引:5

资源类型:外文期刊论文

54. Effect of heat sink layer on ultrafast magnetization recovery of FeCo films 代表性成果 SCIE

作者:Ren, Y; Zhao, JQ; Zhang, ZZ; Jin, QY; Hu, HN; Zhou, SM

通讯作者地址:Jin, QY (reprint author), Fudan Univ, Dept Opt Sci & Engn, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China.

作者机构:[Ren, Y.; Zhao, J. Q.; Zhang, Z. Z.; Jin, Q. Y.] Fudan Univ, Dept Opt Sci & Engn, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R C 更多

来源:JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008,41,8

收录类别:;SCIE

当年影响因子:2.588

WOS被引:3

资源类型:外文期刊论文

59. Fabrication of ultra thin porous alumina membrane on silicon substrate 代表性成果 SCIE

作者:Yang, HW; Zhang, Z; Duan, XN; Yu, HK; Jin, QY

通讯作者地址:Yu, HK (reprint author), Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China.

作者机构:[Yang Hao-Wei; Duan Xiao-Nan; Yu Hong-Kun] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China.; [Zhang Zhang; Jin Qing-Yuan] Fudan Univ, Dep 更多

来源:ACTA PHYSICO-CHIMICA SINICA,2008,24,2,313-316

收录类别:SCIE;

当年影响因子:0.767

WOS被引:1

资源类型:外文期刊论文

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