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2. Magnetic anisotropy and thermal stability study of perpendicular Co/Ni multilayers 代表性成果 SCOPUS SCIE CPCI-S EI

作者:Wang, GZ;Zhang, ZZ;Ma, B;Jin, QY

通讯作者:Zhang, Z.(zzzhang@fudan.edu.cn)

通讯作者地址:Wang, GZ (reprint author), Fudan Univ, Dept Opt Sci & Engn, Minist Educ, Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peoples R China.

作者机构:[Wang, Guangzhong; Zhang, Zongzhi; Ma, Bin; Jin, Q. Y.] Fudan Univ, Dept Opt Sci & Engn, Minist Educ, Key Lab Micro & Nano Photon Struct, Shanghai 200 更多

来源:JOURNAL OF APPLIED PHYSICS,2013,113,17

收录类别:SCOPUS;SCIE;CPCI-S;EI

当年影响因子:2.068

WOS被引:8

Scopus被引:1

资源类型:外文期刊论文;外文会议论文

4. Thermal stability of CoFeB/Pt multilayers with perpendicular magnetic anisotropy 代表性成果 SCIE

作者:Zhu, YY; Zhang, ZZ; Ma, B; Jin, QY

通讯作者地址:Zhang, ZZ (reprint author), Fudan Univ, Key Lab Micro & Nanophoton Struct, Minist Educ, Shanghai 200433, Peoples R China.

作者机构:[Zhang, Zongzhi] Fudan Univ, Key Lab Micro & Nanophoton Struct, Minist Educ, Shanghai 200433, Peoples R China.; Fudan Univ, Dept Opt Sci & Engn, Sha 更多

来源:JOURNAL OF APPLIED PHYSICS,2012,111,7

收录类别:SCIE;

当年影响因子:2.068

WOS被引:3

资源类型:外文期刊论文

6. Magnetization reversal of L1(0) FePt/Co/Fe trilayers 代表性成果 SCIE

作者:Liao, JL; Zhang, XH; Ma, B; Zhang, ZZ; Jin, QY

通讯作者地址:Ma, B (reprint author), Fudan Univ, Minist Educ, Adv Mat Lab, Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peoples R China.

作者机构:[Ma, B.] Fudan Univ, Minist Educ, Adv Mat Lab, Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peoples R China.; Fudan Univ, Dept Opt Sci & Eng 更多

来源:JOURNAL OF APPLIED PHYSICS,2011,109,7

收录类别:;SCIE

当年影响因子:2.068

WOS被引:1

资源类型:外文期刊论文

7. Compositional control of FexPt(1-x) nanowires by electrodeposition 代表性成果 SCIE

作者:Xu, JP; Zhang, ZZ; Ma, B; Jin, QY

通讯作者地址:Jin, QY (reprint author), Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Adv Mat Lab, Shanghai 200433, Peoples R China.

作者机构:[Jin, Q. Y.] Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Adv Mat Lab, Shanghai 200433, Peoples R China.; Fudan Univ, Dept Opt Sci & 更多

来源:JOURNAL OF APPLIED PHYSICS,2011,109,7

收录类别:;SCIE

当年影响因子:2.068

WOS被引:11

资源类型:外文期刊论文

8. Enhanced difference in switching fields for perpendicular magnetic spin valves with a composite [Co/Ni](N)/TbCo reference layer 代表性成果 SCIE

作者:Liao, JL; He, H; Zhang, ZZ; Ma, B; Jin, QY

通讯作者地址:Zhang, ZZ (reprint author), Fudan Univ, Adv Mat Lab, Minist Educ, Dept Opt Sci & Engn,Key Lab Micro & Nano Photon S, Shanghai 200433, Peoples R China.

作者机构:[Liao, Jialin; He, He; Zhang, Zongzhi; Ma, Bin; Jin, Q. Y.] Fudan Univ, Adv Mat Lab, Minist Educ, Dept Opt Sci & Engn,Key Lab Micro & Nano Photon S, S 更多

来源:JOURNAL OF APPLIED PHYSICS,2011,109,2

收录类别:SCIE;

当年影响因子:2.068

WOS被引:6

资源类型:外文期刊论文

10. Anomalous hysteresis loops measured by the magneto-optical Kerr effect in a Co/NiO/Cu/Co/Cu structure 代表性成果 SCIE

作者:Zhao, ZC; Wang, H; Xiao, SQ; Xia, YX; McGuire, JA; Ren, Y; Jin, QY; Gao, TR

通讯作者地址:Wang, H (reprint author), Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200240, Peoples R China.

作者机构:[Zhao, ZC; Wang, H; Xiao, SQ; Xia, YX; McGuire, JA; Ren, Y; Jin, QY; Gao, TR]Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200240, People 更多

来源:JOURNAL OF APPLIED PHYSICS,2007,101,1

收录类别:;SCIE

当年影响因子:2.068

WOS被引:2

资源类型:外文期刊论文

11. Pinning effect and thermal stability study in L1(0) FePt-pinned spin valves 代表性成果 SCIE

作者:Zhao, H; Zhang, ZZ; Ma, B; Jin, QY

通讯作者地址:Zhang, ZZ (reprint author), Fudan Univ, Dept Opt Sci & Engn, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China.

作者机构:[Zhao, H; Zhang, ZZ; Ma, B; Jin, QY]Fudan Univ, Dept Opt Sci & Engn, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China.

来源:JOURNAL OF APPLIED PHYSICS,2007,102,2

收录类别:;SCIE

当年影响因子:2.068

WOS被引:3

资源类型:外文期刊论文

13. Spin-transfer-induced magnetization switching in magnetic tunnel junctions 代表性成果 SCIE

作者:Zhang, YS; Zhang, ZZ; Liu, YW; Ma, B; Jin, QY

通讯作者地址:Zhang, ZZ (reprint author), Fudan Univ, Dept Opt Sci & Engn, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China.

作者机构:[Zhang, YS; Zhang, ZZ; Liu, YW; Ma, B; Jin, QY]Fudan Univ, Dept Opt Sci & Engn, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peopl 更多

来源:JOURNAL OF APPLIED PHYSICS,2006,99,8

收录类别:;SCIE

当年影响因子:2.068

WOS被引:9

资源类型:外文期刊论文

14. Inverse magnetoresistance caused by nano-nitride-layer doping at the inner interfaces in the sandwich of Co/Cu/Co 代表性成果 SCIE

作者:Zhao, ZC; Wang, H; Xiao, SQ; Huang, D; Gu, YZ; Xia, YX; Jin, QY; Zha, CL; Wu, XS

通讯作者地址:Wang, H (reprint author), Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China.

作者机构:[Zhao, ZC; Wang, H; Xiao, SQ; Huang, D; Gu, YZ; Xia, YX; Jin, QY; Zha, CL; Wu, XS]Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, 更多

来源:JOURNAL OF APPLIED PHYSICS,2006,99,8

收录类别:;SCIE

当年影响因子:2.068

WOS被引:2

资源类型:外文期刊论文

16. Spin reorientation induced by Ni atoms in Fe/Cu(001) 代表性成果 SCIE

作者:Zhao, Y; Ye, J; Gao, CL; Ma, B; Jin, QY

通讯作者地址:Jin, QY (reprint author), Fudan Univ, State Key Lab Mat Modificat Laser Electron & Ion, Shanghai 200433, Peoples R China.

作者机构:[Zhao, Y; Ye, J; Gao, CL; Ma, B; Jin, QY]Fudan Univ, State Key Lab Mat Modificat Laser Electron & Ion, Shanghai 200433, Peoples R China.;[Zhao 更多

来源:JOURNAL OF APPLIED PHYSICS,2003,94,8,5100-5102

收录类别:;SCIE

当年影响因子:2.068

WOS被引:1

资源类型:外文期刊论文

17. Magnetoresistance decay and switching-field change in SiO2-Ni dusted Co/Cu/Co structures 代表性成果 SCIE

作者:Wang, H; Zhao, ZC; Xia, YX; Jin, QY

通讯作者地址:Wang, H (reprint author), Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China.

作者机构:[Wang, H; Zhao, ZC; Xia, YX; Jin, QY]Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China.;[Wang, H; Zhao, ZC; Xia, YX; Ji 更多

来源:JOURNAL OF APPLIED PHYSICS,2002,92,3,1709-1711

收录类别:SCIE;

当年影响因子:2.068

WOS被引:1

资源类型:外文期刊论文

18. Magneto-optical characteristics of SiN/GdFe films 代表性成果 SCIE

作者:Shen, ZC; Wang, SY; Li, J; Li, HY; Jin, QY; Zhang, RJ; Zhou, SM; Chen, LY

通讯作者地址:Shen, ZC (reprint author), Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.

作者机构:[Shen, ZC; Wang, SY; Li, J; Li, HY; Jin, QY; Zhang, RJ; Zhou, SM; Chen, LY]Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.

来源:JOURNAL OF APPLIED PHYSICS,2001,89,7,3744-3747

收录类别:;SCIE

当年影响因子:2.068

WOS被引:1

资源类型:外文期刊论文

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