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  • 认领成果数 110
  • wos论文数 109
  • wos被引 606
  • wos篇均被引 5.56

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1. Manipulation of perpendicular exchange bias effect in [Co/Ni](N)/(Cu, Ta)/TbCo multilayer structures 代表性成果 SCOPUS SCIE EI

作者:Tang, MH;Zhang, ZZ;Jin, QY

通讯作者地址:Tang, MH (reprint author), Fudan Univ, Dept Opt Sci & Engn, Minist Educ, Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peoples R China.

作者机构:[Tang, Minghong; Zhang, Zongzhi; Jin, Qingyuan] Fudan Univ, Dept Opt Sci & Engn, Minist Educ, Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peo 更多

来源:AIP ADVANCES,2015,5,8

收录类别:SCOPUS;SCIE;EI

当年影响因子:1.568

WOS被引:4

Scopus被引:3

资源类型:外文期刊论文

2. SiO2 layer thickness effects on the (001) texture of FePtCu:SiO2 nanocomposite films 代表性成果 SCIE

作者:Ma, B; Zha, CL; Zhang, ZZ; Jin, QY

通讯作者地址:Ma, B (reprint author), Fudan Univ, Key Lab Adv Photon Mat & Devices, Adv Mat Lab, Shanghai 200433, Peoples R China.

作者机构:[Ma, B.] Fudan Univ, Key Lab Adv Photon Mat & Devices, Adv Mat Lab, Shanghai 200433, Peoples R China.; Fudan Univ, Dept Opt Sci & Engn, Shanghai 200 更多

来源:THIN SOLID FILMS,2010,518,8,2163-2166

收录类别:;SCIE

当年影响因子:1.879

WOS被引:4

资源类型:外文期刊论文

3. Dynamic dipolar interaction effect on spin-transfer switching with perpendicular anisotropy 代表性成果 SCIE

作者:Qiu, YC; Zhang, ZZ; Jin, QY; Liu, YW

通讯作者地址:Zhang, ZZ (reprint author), Fudan Univ, Dept Opt Sci & Engn, Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China.

作者机构:[Qiu, Yongcheng; Zhang, Zongzhi; Jin, Q. Y.] Fudan Univ, Dept Opt Sci & Engn, Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China.; [ 更多

来源:APPLIED PHYSICS LETTERS,2009,95,5

收录类别:SCIE;

当年影响因子:3.411

WOS被引:5

资源类型:外文期刊论文

5. Spin reorientation of Fe films studied by the magneto-optical Kerr effect 代表性成果 SCIE

作者:Ye, J; Ma, B; Zhao, Y; Gao, CL; Jin, QY

通讯作者地址:Ye, J (reprint author), Fudan Univ, Dept Opt Sci & Engn, State Key Joint Lab Mat Modificat Laser Ion & Ele, Shanghai 200433, Peoples R China.

作者机构:[Ye, J; Ma, B; Zhao, Y; Gao, CL; Jin, QY]Fudan Univ, Dept Opt Sci & Engn, State Key Joint Lab Mat Modificat Laser Ion & Ele, Shanghai 200433, 更多

来源:JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2004,44,3,745-749

收录类别:;SCIE

当年影响因子:0.467

WOS被引:1

资源类型:外文期刊论文

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