• 所属院系:信息科学技术学院
  • 认领成果数 21
  • wos论文数 21
  • wos被引 88
  • wos篇均被引 4.19

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1. Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels 代表性成果 SCIE

作者:Wang, XD; Liu, CS; Chen, Y; Wu, GJ; Yan, X; Huang, H; Wang, P; Tian, BB; Hong, ZC; Wang, YT; Sun, S; Shen, H; Lin, T; Hu, WD; Tang, MH; Zhou, P; Wang, J; Sun, JJ; Meng, XJ; Chu, JH; Li, Z

通讯作者地址:Tang, MH (reprint author), Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Key Film Mat & Applicat Equipm, Xiangtan 411105, Hunan, Peoples R China.; Tang, MH (reprint author), Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Hunan, Peoples R China.

作者机构:[Wang, Xudong; Tang, Minghua; Li, Zheng] Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Key Film Mat & Applicat Equipm, Xiangtan 411105, Hunan, 更多

来源:2D MATERIALS,2017,4,2

收录类别:SCIE

当年影响因子:6.937

WOS被引:3

资源类型:外文期刊论文

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