孙琳 + 关注学者
  • 所属院系:信息科学技术学院
  • 认领成果数 73
  • wos论文数 71
  • wos被引 1,192
  • wos篇均被引 16.79

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1. Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor 代表性成果 SCOPUS SCIE EI

作者:Meng, XK;Deng, HM;Zhang, Q;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong(pxyang@ee.ecnu.edu.cn)

通讯作者地址:Yang, PX (reprint author), East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Meng, Xiankuan; Zhang, Qiao; Sun, Lin; Yang, Pingxiong; Chu, Junhao] East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Edu 更多

来源:MATERIALS LETTERS,2017,186,138-141

收录类别:SCOPUS;SCIE;EI

当年影响因子:2.572

WOS被引:4

Scopus被引:4

资源类型:外文期刊论文

2. Synthesis of Cu2MnSnS4 thin film deposited on seeded fluorine doped tin oxide substrate via a green and low-cost electrodeposition method 代表性成果 SCOPUS SCIE EI

作者:Yu, JJ;Deng, HM;Tao, JH;Chen, LL;Cao, HY;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong(pxyang@ee.ecnu.edu.cn)

通讯作者地址:Yang, PX (reprint author), East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.

作者机构:[Yu, Jiejin; Tao, Jiahua; Chen, Leilei; Cao, Huiyi; Sun, Lin; Yang, Pingxiong; Chu, Junhao] East China Normal Univ, Dept Elect Engn, Minist Educ, Key 更多

来源:MATERIALS LETTERS,2017,191,186-188

收录类别:SCOPUS;SCIE;EI

当年影响因子:2.572

WOS被引:2

Scopus被引:2

资源类型:外文期刊论文

3. Investigation of Cu2ZnSnS4 thin films with controllable Cu composition and its influence on photovoltaic properties for solar cells 代表性成果 SCOPUS SCIE EI

作者:Li, XR;Cao, HY;Dong, YC;Yue, FY;Chen, Y;Xiang, PH;Sun, L;Yang, PX;Chu, JH

通讯作者:Sun, Lin(lsun@ee.ecnu.edu.cn)

通讯作者地址:Xiang, PH; Sun, L (reprint author), East China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Dept Elect Engn, Shanghai 200241, Peoples R China.

作者机构:[Li, Xinran; Cao, Huiyi; Dong, Yuchen; Yue, Fangyu; Chen, Ye; Xiang, Pinghua; Sun, Lin; Yang, Pingxiong; Chu, Junhao] East China Normal Univ, Key Lab 更多

来源:JOURNAL OF ALLOYS AND COMPOUNDS,2017,694,833-840

收录类别:SCOPUS;SCIE;EI

当年影响因子:3.133

WOS被引:5

Scopus被引:6

资源类型:外文期刊论文

4. Cation substitution induced structural transition, band gap engineering and grain growth of Cu2CdxZn1-xSnS4 thin films 代表性成果 SCOPUS SCIE EI

作者:Zhang, Q;Deng, HM;Chen, LL;Yu, L;Tao, JH;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong(pxyang@ee.ecnu.edu.cn)

通讯作者地址:Yang, PX (reprint author), East China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Dept Elect Engn, Shanghai 200241, Peoples R China.

作者机构:[Zhang, Qiao; Chen, Leilei; Yu, Lu; Tao, Jiahua; Sun, Lin; Yang, Pingxiong; Chu, Junhao] East China Normal Univ, Key Lab Polar Mat & Devices, Minist E 更多

来源:JOURNAL OF ALLOYS AND COMPOUNDS,2017,695,482-488

收录类别:SCOPUS;SCIE;EI

当年影响因子:3.133

WOS被引:4

Scopus被引:2

资源类型:外文期刊论文

6. 7.1% efficient co-electroplated Cu2ZnSnS4 thin film solar cells with sputtered CdS buffer layers 代表性成果 SCOPUS SCIE

作者:Tao, JH;Liu, JF;Chen, LL;Cao, HY;Meng, XK;Zhang, YB;Zhang, CJ;Sun, L;Yang, PX;Chu, JH

通讯作者地址:Chu, JH (reprint author), E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Dept Elect Engn, Shanghai 200241, Peoples R China.; Chu, JH (reprint author), Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China.

作者机构:[Tao, Jiahua; Liu, Junfeng; Chen, Leilei; Cao, Huiyi; Meng, Xiankuan; Zhang, Yingbin; Sun, Lin; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Key 更多

来源:GREEN CHEMISTRY,2016,18,2,550-557

收录类别:SCOPUS;SCIE

当年影响因子:9.125

WOS被引:27

Scopus被引:39

资源类型:外文期刊论文

7. Antimony-induced grain growth and properties modification of Cu(In, Al)Se-2 thin films fabricated by selenization of sputtered stacked precursors 代表性成果 SCOPUS SCIE EI

作者:Cao, HY;Deng, HM;Chen, LL;Tao, JH;Meng, XK;Liu, J;Yue, FY;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong(pxyang@ee.ecnu.edu.cn)

通讯作者地址:Yang, PX (reprint author), East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Cao, Huiyi; Chen, Leilei; Tao, Jiahua; Meng, Xiankuan; Liu, Jian; Yue, Fangyu; Sun, Lin; Yang, Pingxiong; Chu, Junhao] East China Normal Univ, Dept E 更多

来源:JOURNAL OF ALLOYS AND COMPOUNDS,2016,689,21-29

收录类别:SCOPUS;SCIE;EI

当年影响因子:3.133

WOS被引:4

Scopus被引:4

资源类型:外文期刊论文

8. Strategic improvement of Cu2MnSnS4 films by two distinct post annealing processes for constructing thin film solar cells 代表性成果 SCOPUS SCIE EI

作者:Chen, LL;Deng, HM;Tao, JH;Cao, HY;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong(pxyang@ee.ecnu.edu.cn)

通讯作者地址:Yang, PX (reprint author), E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Chen, Leilei; Tao, Jiahua; Cao, Huiyi; Sun, Lin; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Min 更多

来源:ACTA MATERIALIA,2016,109,1-7

收录类别:SCOPUS;SCIE;EI

当年影响因子:5.301

WOS被引:10

Scopus被引:10

资源类型:外文期刊论文

9. Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3 代表性成果 SCOPUS SCIE EI

作者:Zhang, HB;Qi, RJ;Ding, NF;Huang, R;Sun, L;Duan, CG;Fisher, CAJ;Chu, JH;Ikuhara, Y

通讯作者:Huang, R.(rhuang@ee.ecnu.edu.cn)

通讯作者地址:Huang, R; Duan, CG (reprint author), E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China.; Huang, R (reprint author), Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan.; Huang, R; Duan, CG (reprint author), Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China.

作者机构:[Zhang, H. B.; Qi, R. J.; Ding, N. F.; Huang, R.; Sun, L.; Duan, C. G.; Chu, J. H.] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Sha 更多

来源:AIP ADVANCES,2016,6,1

收录类别:SCOPUS;SCIE;EI

当年影响因子:1.568

资源类型:外文期刊论文

10. Study on the preheating duration of Cu2SnS3 thin films using RF magnetron sputtering technique for photovoltaics 代表性成果 SCOPUS SCIE EI

作者:Dong, YC;He, J;Li, XR;Chen, Y;Sun, L;Yang, PX;Chu, JH

通讯作者:Sun, Lin(lsun@ee.ecnu.edu.cn)

通讯作者地址:Sun, L (reprint author), E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Dong, Yuchen; He, Jun; Li, Xinran; Chen, Ye; Sun, Lin; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Device 更多

来源:JOURNAL OF ALLOYS AND COMPOUNDS,2016,665,69-75

收录类别:SCOPUS;SCIE;EI

当年影响因子:3.133

WOS被引:6

Scopus被引:8

资源类型:外文期刊论文

11. Heating rate tuning in structure, morphology and electricity properties of Cu2FeSnS4 thin films prepared by sulfurization of metallic precursors 代表性成果 SCOPUS SCIE EI

作者:Meng, XK;Deng, HM;Tao, JH;Cao, HY;Li, XR;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong(pxyang@ee.ecnu.edu.cn)

通讯作者地址:Yang, PX (reprint author), E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.

作者机构:[Meng, Xiankuan; Tao, Jiahua; Cao, Huiyi; Li, Xinran; Sun, Lin; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Minist Educ, Key L 更多

来源:JOURNAL OF ALLOYS AND COMPOUNDS,2016,680,446-451

收录类别:SCOPUS;SCIE;EI

当年影响因子:3.133

WOS被引:11

Scopus被引:17

资源类型:外文期刊论文

13. Microstructural and morphological properties of sputtered Cu(In, Al)Se-2 thin films for solar cell applications 代表性成果 SCOPUS SCIE EI

作者:Cao, HY;Deng, HM;Tao, JH;Zhou, WL;Meng, XK;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong

通讯作者地址:Yang, PX (reprint author), E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Cao, Huiyi; Tao, Jiahua; Zhou, Wenliang; Meng, Xiankuan; Sun, Lin; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Key Lab Polar 更多

来源:MATERIALS LETTERS,2015,157,42-44

收录类别:SCOPUS;SCIE;EI

当年影响因子:2.572

WOS被引:3

资源类型:外文期刊论文

14. Influence of different S/Se ratio on the properties of Cu2Sn(SxSe1-x)(3) thin films fabricated by annealing stacked metal precursors 代表性成果 SCOPUS SCIE EI

作者:Dong, YC;He, J;Tao, JH;Sun, L;Yang, PX;Chu, JH

通讯作者:Sun, Lin

通讯作者地址:Sun, L (reprint author), E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Dept Elect Engn, 500 Dongchuan Rd, Shanghai 200241, Peoples R China.

作者机构:[Dong, Yuchen; He, Jun; Tao, Jiahua; Sun, Lin; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Dept Elect 更多

来源:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26,9,6723-6729

收录类别:SCOPUS;SCIE;EI

当年影响因子:2.019

WOS被引:7

Scopus被引:8

资源类型:外文期刊论文

15. Sulfurization temperature dependence of the structural transition in Cu2FeSnS4-based thin films 代表性成果 SCOPUS SCIE EI

作者:Meng, XK;Deng, HM;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong

通讯作者地址:Yang, PX (reprint author), E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Meng, Xiankuan; Sun, Lin; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 2002 更多

来源:MATERIALS LETTERS,2015,161,427-430

收录类别:SCOPUS;SCIE;EI

当年影响因子:2.572

WOS被引:5

资源类型:外文期刊论文

17. Synthesis and characterization of earth-abundant Cu2MnSnS4 thin films using a non-toxic solution-based technique 代表性成果 SCOPUS SCIE EI

作者:Chen, LL;Deng, HM;Tao, JH;Cao, HY;Huang, L;Sun, L;Yang, PX;Chu, JH

通讯作者:Yang, Pingxiong

通讯作者地址:Yang, PX (reprint author), E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, 500 Dongchuan Rd, Shanghai 200241, Peoples R China.

作者机构:[Chen, Leilei; Tao, Jiahua; Cao, Huiyi; Huang, Ling; Sun, Lin; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & 更多

来源:RSC ADVANCES,2015,5,102,84295-84302

收录类别:SCOPUS;SCIE;EI

当年影响因子:3.108

WOS被引:12

Scopus被引:12

资源类型:外文期刊论文

20. Effect of sulfurization temperature on properties of Cu2SnS3 thin films and solar cells prepared by sulfurization of stacked metallic precursors 代表性成果 SCOPUS SCIE EI

作者:Dong, YC;He, J;Sun, L;Chen, Y;Yang, PX;Chu, JH

通讯作者:Sun, Lin

通讯作者地址:Sun, L (reprint author), E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China.

作者机构:[Dong, Yuchen; He, Jun; Sun, Lin; Chen, Ye; Yang, Pingxiong; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devic 更多

来源:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,38,171-176

收录类别:SCOPUS;SCIE;EI

当年影响因子:2.359

WOS被引:18

资源类型:外文期刊论文

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