李文武 + 关注学者
  • 认领成果数 40
  • wos论文数 40
  • wos被引 605
  • wos篇均被引 15.12

全部成果分类

显示更多
导出 规范数据导出
  • 排序
  • 显示
1. Higher wavenumber shift of Pb (Al1/2Nb1/2)O-3 substitution in relaxor ferroelectric Pb(Zr0.52Ti0.48)O-3-Pb(Zn1/3Nb2/3)O-3 ceramics 代表性成果 SCOPUS SCIE EI

作者:Zhu, JJ;Li, CQ;Jiang, K;Zhang, P;Tong, WY;Liu, AY;Shi, WZ;Liu, Y;Huang, YP;Li, WW;Hu, ZG

通讯作者:Tong, Wen-Yi(twy891137ssyy@163.com)

通讯作者地址:Tong, WY; Li, WW (reprint author), East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.; Huang, YP (reprint author), Soochow Univ, Dept Phys, Taipei 11102, Taiwan.

作者机构:[Zhu, Jiajun; Li, Chuanqing; Jiang, Kai; Zhang, Peng; Tong, Wen-Yi; Li, Wenwu; Hu, Zhigao] East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat 更多

来源:MATERIALS LETTERS,2017,188,284-287

收录类别:SCOPUS;SCIE;EI

当年影响因子:2.572

WOS被引:1

Scopus被引:1

资源类型:外文期刊论文

4. Planar-Processed Polymer Transistors 代表性成果 SCOPUS SCIE PubMed EI

作者:Xu, Y;Sun, H;Shin, EY;Lin, YF;Li, WW;Noh, YY

通讯作者:Xu, Yong(xu.yong@dongguk.edu)

通讯作者地址:Xu, Y; Noh, YY (reprint author), Dongguk Univ, Dept Energy & Mat Engn, 30 Pildong Ro, Seoul 04620, South Korea.; Li, WW (reprint author), East China Normal Univ, Key Lab Polar Mat & Devices, Dept Elect Engn, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Xu, Yong; Sun, Huabin; Shin, Eul-Yong; Noh, Yong-Young] Dongguk Univ, Dept Energy & Mat Engn, 30 Pildong Ro, Seoul 04620, South Korea.; [Lin, Yen-F 更多

来源:ADVANCED MATERIALS,2016,28,38,8531-8537

收录类别:SCOPUS;SCIE;PubMed;EI

当年影响因子:19.791

WOS被引:6

Scopus被引:6

资源类型:外文期刊论文

9. Barrier inhomogeneities at vertically stacked graphene-based heterostructures 代表性成果 SCIE

作者:Lin, YF; Li, WW; Li, SL; Xu, Y; Aparecido-Ferreira, A; Komatsu, K; Sun, HB; Nakaharai, S; Tsukagoshi, K

通讯作者地址:Lin, YF (reprint author), NIMS, WPI Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan.

作者机构:[Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito] NIM 更多

来源:NANOSCALE,2014,6,2,795-799

收录类别:SCIE

当年影响因子:7.367

WOS被引:27

资源类型:外文期刊论文

12. Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors 代表性成果 SCIE

作者:Li, SL; Wakabayashi, K; Xu, Y; Nakaharai, S; Komatsu, K; Li, WW; Lin, YF; Aparecido-Ferreira, A; Tsukagoshi, K

通讯作者地址:Li, SL (reprint author), Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitechton WPI MANA, Tsukuba, Ibaraki 3050044, Japan.

作者机构:[Li, Song-Lin; Wakabayashi, Katsunori; Xu, Yong; Nakaharai, Shu; Komatsu, Katsuyoshi; Li, Wen-Wu; Lin, Yen-Fu; Aparecido-Ferreira, Alex; Tsukagoshi, K 更多

来源:NANO LETTERS,2013,13,8,3546-3552

收录类别:SCIE

当年影响因子:12.712

WOS被引:95

资源类型:外文期刊论文

13. Realization of graphene field-effect transistor with high-kappa HCa2Nb3O10 nanoflake as top-gate dielectric 代表性成果 SCIE

作者:Li, WW; Li, SL; Komatsu, K; Aparecido-Ferreira, A; Lin, YF; Xu, Y; Osada, M; Sasaki, T; Tsukagoshi, K

通讯作者地址:Li, WW (reprint author), Natl Inst Mat Sci, World Premier Int Ctr Mat Nanoarchitecton WPI MAN, Tsukuba, Ibaraki 3050044, Japan.

作者机构:[Li, Wenwu; Li, Song-Lin; Komatsu, Katsuyoshi; Aparecido-Ferreira, Alex; Lin, Yen-Fu; Xu, Yong; Osada, Minoru; Sasaki, Takayoshi; Tsukagoshi, Kazuhito 更多

来源:APPLIED PHYSICS LETTERS,2013,103,2

收录类别:;SCIE

当年影响因子:3.411

WOS被引:3

资源类型:外文期刊论文

16. Doping effect on the phase transition temperature in ferroelectric SrBi2-xNdxNb2O9 layer-structured ceramics: a micro-Raman scattering study 代表性成果 SCOPUS SCIE

作者:Jiang, K;Li, WW;Chen, XG;Zhan, ZN;Sun, L;Hu, ZG;Chu, JH

通讯作者地址:Hu, ZG (reprint author), E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Jiang, Kai; Li, Wenwu; Chen, Xiangui; Zhan, Zhenni; Sun, Lin; Hu, Zhigao; Chu, Junhao] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devi 更多

来源:JOURNAL OF RAMAN SPECTROSCOPY,2012,43,4,583-587

收录类别:SCOPUS;SCIE

当年影响因子:2.969

WOS被引:8

Scopus被引:8

资源类型:外文期刊论文

共 2 页, 40 条记录

TOP