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1. Multiphonon ionization of traps formed in hafnium oxide by electrical stress 代表性成果 SCIE

作者:Danilyuk, AL; Migas, DB; Danilyuk, MA; Borisenko, VE; Wu, X; Raghavan, N; Pey, KL

通讯作者地址:Danilyuk, AL (reprint author), Belorussian State Univ Informat & Radioelect, P Browka 6, Minsk 220013, Byelarus.

作者机构:[Danilyuk, A. L.; Migas, D. B.; Danilyuk, M. A.; Borisenko, V. E.] Belorussian State Univ Informat & Radioelect, Minsk 220013, Byelarus.; [Wu, X.; R 更多

来源:PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2013,210,2,361-366

收录类别:SCIE

当年影响因子:1.775

资源类型:外文期刊论文

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