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  • 认领成果数 40
  • wos论文数 39
  • wos被引 370
  • wos篇均被引 9.49

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2. Suppression of concentration quenching of Er-related luminescence in Er-doped GaN 代表性成果 SCIE

作者:Chen, SQ; Dierre, B; Lee, W; Sekiguchi, T; Tomita, S; Kudo, H; Akimoto, K

通讯作者地址:Chen, SQ (reprint author), Univ Tokyo, Inst Solid State Phys, Kashiwanoha 5-1-5, Chiba 2778581, Japan.

作者机构:[Chen, Shaoqiang; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan.; [Dierre, Benjam 更多

来源:APPLIED PHYSICS LETTERS,2010,96,18

收录类别:SCIE;

当年影响因子:3.411

WOS被引:14

资源类型:外文期刊论文

3. Relationship between defects and optical properties in Er-doped GaN 代表性成果 SCIE

作者:Chen, SQ; Uedono, A; Seo, J; Sawahata, J; Akimoto, K

通讯作者地址:Chen, SQ (reprint author), Univ Tsukuba, Inst Appl Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, Japan.

作者机构:[Chen, Shaoqiang; Uedono, Akira; Seo, Jongwon; Sawahata, Junji; Akimoto, Katsuhiro] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan.

来源:JOURNAL OF CRYSTAL GROWTH,2009,311,10,3097-3099

收录类别:SCIE;

当年影响因子:1.751

WOS被引:4

资源类型:外文期刊论文

4. Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy 代表性成果 SCIE

作者:Chen, SQ; Seo, J; Sawahata, J; Akimoto, K

通讯作者地址:Chen, SQ (reprint author), Univ Tsukuba, Inst Appl Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, Japan.

作者机构:[Chen, Shaoqiang; Seo, Jongwon; Sawahata, Junji; Akimoto, Katsuhiro] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan.

来源:JOURNAL OF CRYSTAL GROWTH,2009,311,7,2042-2045

收录类别:SCIE;

当年影响因子:1.751

WOS被引:6

资源类型:外文期刊论文

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