陈时友 + 关注学者
  • 认领成果数 76
  • wos论文数 73
  • wos被引 4,279
  • wos篇均被引 58.62

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1. Influence of defects and dopants on the photovoltaic performance of Bi2S3: first-principles insights 代表性成果 SCOPUS SCIE EI

作者:Han, D;Du, MH;Dai, CM;Sun, DY;Chen, SY

通讯作者:Sun, Deyan(dysun@phy.ecnu.edu.cn)

通讯作者地址:Sun, DY (reprint author), East China Normal Univ, Dept Phys, Shanghai 200241, Peoples R China.; Chen, SY (reprint author), East China Normal Univ, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China.; Chen, SY (reprint author), Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA.

作者机构:[Han, Dan; Sun, Deyan] East China Normal Univ, Dept Phys, Shanghai 200241, Peoples R China.; [Han, Dan; Dai, Chen-Min; Chen, Shiyou] East China Norm 更多

来源:JOURNAL OF MATERIALS CHEMISTRY A,2017,5,13,6200-6210

收录类别:SCOPUS;SCIE;EI

当年影响因子:8.867

WOS被引:4

Scopus被引:3

资源类型:外文期刊论文

2. Sodium Passivation of the Grain Boundaries in CuInSe2 and Cu2ZnSnS4 for High-Efficiency Solar Cells 代表性成果 SCOPUS SCIE EI

作者:Liu, CY;Li, ZM;Gu, HY;Chen, SY;Xiang, HJ;Gong, XG

通讯作者:Gong, Xin-Gao(xggong@fudan.edu.cn)

通讯作者地址:Gong, XG (reprint author), Fudan Univ, Key Lab Computat Phys Sci, Minist Educ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.; Gong, XG (reprint author), Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.; Gong, XG (reprint author), Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China.

作者机构:[Liu, Cheng-Yan; Li, Zhi-Ming; Gu, Hong-Yang; Xiang, Hongjun; Gong, Xin-Gao] Fudan Univ, Key Lab Computat Phys Sci, Minist Educ, State Key Lab Surface 更多

来源:ADVANCED ENERGY MATERIALS,2017,7,8

收录类别:SCOPUS;SCIE;EI

当年影响因子:16.721

WOS被引:4

Scopus被引:3

资源类型:外文期刊论文

3. GeSe Thin-Film Solar Cells Fabricated by Self-Regulated Rapid Thermal Sublimation 代表性成果 SCOPUS SCIE PubMed EI

作者:Xue, DJ;Lui, SC;Dai, CM;Chen, SY;He, C;Zhao, L;Hu, JS;Wan, LJ

通讯作者:Wan, Li-Jun(wanlijun@iccas.ac.cn)

通讯作者地址:Wan, L.-J.; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of SciencesChina; 电子邮件: wanlijun@iccas.ac.cn

作者机构:[Xue, Ding-Jiang; Lui, Shun-Chang; He, Chao; Zhao, Lu; Hu, Jin-Song; Wan, Li-Jun] Chinese Acad Sci, Inst Chem, Key Lab Mol Nanostruct & Nanotechnol, B 更多

来源:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2017,139,2,958-965

收录类别:SCOPUS;SCIE;PubMed;EI

当年影响因子:13.858

WOS被引:10

Scopus被引:13

资源类型:外文期刊论文

4. Thermal conductivity of disordered two-dimensional binary alloys 代表性成果 SCIE

作者:Zhou, Y; Guo, ZX; Cao, HY; Chen, SY; Xiang, HJ; Gong, XG

通讯作者地址:Gong, XG (reprint author), Fudan Univ, Minist Educ, State Key Lab Surface Phys, Key Lab Computat Phys Sci, Shanghai 200433, Peoples R China.; Gong, XG (reprint author), Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.; Gong, XG (reprint author), Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China.

作者机构:[Zhou, Yang; Cao, Hai-Yuan; Chen, Shi-You; Xiang, Hong-Jun; Gong, Xin-Gao] Fudan Univ, Minist Educ, State Key Lab Surface Phys, Key Lab Computat Phys 更多

来源:NANOSCALE,2016,8,41,17815-17819

收录类别:SCIE

当年影响因子:7.367

WOS被引:1

资源类型:外文期刊论文

7. Self-passivation rule and structure of CdTe Sigma 3 (112) grain boundaries 代表性成果 SCOPUS SCIE

作者:Liu, CY;Zhang, YY;Hou, YS;Chen, SY;Xiang, HJ;Gong, XG

通讯作者地址:Gong, XG (reprint author), Fudan Univ, State Key Lab Surface Phys, Key Lab Computat Phys Sci, Dept Phys,Minist Educ, Shanghai 200433, Peoples R China.; Gong, XG (reprint author), Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China.

作者机构:[Liu, Cheng-yan; Zhang, Yue-yu; Hou, Yu-sheng; Xiang, Hong-jun; Gong, Xin-gao] Fudan Univ, State Key Lab Surface Phys, Key Lab Computat Phys Sci, Dept 更多

来源:PHYSICAL REVIEW B,2016,93,20

收录类别:SCOPUS;SCIE

当年影响因子:3.836

WOS被引:2

资源类型:外文期刊论文

8. Orbital-frustration-induced ordering in semiconductor alloys 代表性成果 SCOPUS SCIE

作者:Liu, K;Yin, WJ;Chen, SY;Gong, XG;Wei, SH;Xiang, HJ

通讯作者地址:Xiang, HJ (reprint author), Fudan Univ, Collaborat Innovat Ctr Adv Microstruct, Key Lab Computat Phys Sci, State Key Lab Surface Phys,Dept Phys,Minist Educ, Shanghai 200241, Peoples R China.; Xiang, HJ (reprint author), Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China.; Wei, SH (reprint author), Computat Sci Res Ctr, Beijing 100193, Peoples R China.

作者机构:[Liu, Kai; Gong, X. G.; Xiang, H. J.] Fudan Univ, Collaborat Innovat Ctr Adv Microstruct, Key Lab Computat Phys Sci, State Key Lab Surface Phys,Dept P 更多

来源:PHYSICAL REVIEW B,2016,93,20

收录类别:SCOPUS;SCIE

当年影响因子:3.836

资源类型:外文期刊论文

11. Polytypic Nanocrystals of Cu-Based Ternary Chalcogenides: Colloidal Synthesis and Photoelectrochemical Properties 代表性成果 SCOPUS SCIE PubMed EI

作者:Wu, L;Chen, SY;Fan, FJ;Zhuang, TT;Dai, CM;Yu, SH

通讯作者:Yu, Shu-Hong(shyu@ustc.edu.cn)

通讯作者地址:Yu, SH (reprint author), Univ Sci & Technol China, CAS, CAS Ctr Excellence Nanosci,Hefei Natl Lab Phys Sc, Hefei Sci Ctr,Dept Chem,Div Nanomaterials & Chem, Hefei 230026, Anhui, Peoples R China.

作者机构:[Wu, Liang; Fan, Feng-Jia; Zhuang, Tao-Tao; Yu, Shu-Hong] Univ Sci & Technol China, CAS, CAS Ctr Excellence Nanosci,Hefei Natl Lab Phys Sc, Hefei Sci 更多

来源:JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2016,138,17,5576-5584

收录类别:SCOPUS;SCIE;PubMed;EI

当年影响因子:13.858

WOS被引:11

Scopus被引:13

资源类型:外文期刊论文

13. 单元素窄禁带半导体纳米结构的第一性原理研究 代表性成果

作者:罗鲲

第一导师:陈时友

学位授予年度:2015

作者机构:信息科学技术学院

专业名称:物理电子学

资源类型:学位论文

14. Cu空位诱导Cu2-xTe结构转变的第一性原理研究 代表性成果

作者:余磊

第一导师:陈时友

学位授予年度:2015

作者机构:信息科学技术学院

专业名称:微电子学与固体电子学

资源类型:学位论文

15. Antiferromagnetic ground state with pair-checkerboard order in FeSe 代表性成果 SCIE

作者:Cao, HY; Chen, SY; Xiang, HJ; Gong, XG

通讯作者地址:Cao, HY (reprint author), Fudan Univ, Key Lab Computat Phys Sci MOE, State Key Lab Surface Phys, Collaborat Innovat Ctr Adv Microstruct, Shanghai 200433, Peoples R China.

作者机构:[Cao, Hai-Yuan] Fudan Univ, Key Lab Computat Phys Sci MOE, State Key Lab Surface Phys, Collaborat Innovat Ctr Adv Microstruct, Shanghai 200433, People 更多

来源:PHYSICAL REVIEW B,2015,91,2

收录类别:SCIE

WOS被引:27

资源类型:外文期刊论文

18. Computational prediction of lattice defects in multinary compound semiconductors as photovoltaic materials 代表性成果 SCOPUS SCIE EI

作者:Yuan, ZK;Xu, P;Chen, SY

通讯作者:Chen, Shi-You

通讯作者地址:Chen, SY (reprint author), E China Normal Univ, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China.

作者机构:[Yuan Zhen-Kun; Xu Peng] Fudan Univ, Key Lab Computat Phys Sci MOE, Shanghai 200433, Peoples R China.; [Chen Shi-You] E China Normal Univ, Key Lab P 更多

来源:ACTA PHYSICA SINICA,2015,64,18

收录类别:SCOPUS;SCIE;EI

当年影响因子:0.624

WOS被引:2

资源类型:外文期刊论文

共 4 页, 76 条记录

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