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4. Analytical parameter extraction for NBTI reaction diffusion and trapping/detrapping models SCOPUS SCIE EI

作者:Wang, YL;Li, XJ;Qing, J;Zeng, Y;Shi, YL;Guo, A;Hu, SJ;Chen, SM;Zhao, YH

通讯作者:Li, XiaoJin(xjli@ee.ecnu.edu.cn)

通讯作者地址:Li, XJ (reprint author), East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Dept Elect Engn, Shanghai, Peoples R China.

作者机构:[Wang, YanLing; Li, XiaoJin; Qing, Jian; Zeng, Yan; Shi, YanLing] East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Dept Elect Engn, 更多

来源:MICROELECTRONICS RELIABILITY,2016,66,10-15

收录类别:SCOPUS;SCIE;EI

当年影响因子:1.371

WOS被引:1

Scopus被引:1

资源类型:外文期刊论文

5. A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors SCIE

作者:Wang, WL;Khan, K;Zhang, XY;Qin, HM;Jiang, J;Miao, LJ;Jiang, KM;Wang, PJ;Dai, MZ;Chu, JH

通讯作者地址:Wang, PJ (reprint author), Ningbo Univ, Inst Circuits & Syst, Ningbo 315211, Zhejiang, Peoples R China.; Dai, MZ (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China.; Chu, JH (reprint author), East China Normal Univ, Lab Polar Mat & Devices, Minist Educ, 500 Dong Chuan Rd, Shanghai 200241, Peoples R China.

作者机构:[Wang, Weiliang; Wang, Pengjun] Ningbo Univ, Inst Circuits & Syst, Ningbo 315211, Zhejiang, Peoples R China.; [Wang, Weiliang; Khan, Karim; Qin, Hai 更多

来源:MICROELECTRONICS RELIABILITY,2016,60,67-69

收录类别:SCIE

当年影响因子:1.371

WOS被引:1

资源类型:外文期刊论文

6. A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors (vol 60, pg 67, 2016) SCOPUS SCIE

作者:Wang, WL;Khan, K;Zhang, XY;Qin, HM;Jiang, J;Miao, LJ;Jiang, KM;Wang, PJ;Dai, MZ;Chu, JH

通讯作者地址:Wang, PJ (reprint author), Ningbo Univ, Inst Circuits & Syst, Ningbo 315211, Zhejiang, Peoples R China.; Dai, MZ (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China.; Chu, JH (reprint author), East China Normal Univ, Lab Polar Mat & Devices, Minist Educ, 500 Dong Chuan Rd, Shanghai 200241, Peoples R China.

作者机构:[Wang, Weiliang; Wang, Pengjun] Ningbo Univ, Inst Circuits & Syst, Ningbo 315211, Zhejiang, Peoples R China.; [Wang, Weiliang; Khan, Karim; Qin, Hai 更多

来源:MICROELECTRONICS RELIABILITY,2016,67,159-159

收录类别:SCOPUS;SCIE

当年影响因子:1.371

资源类型:外文期刊论文

7. Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007) SCOPUS

作者:Wang W.; Khan K.; Zhang X.; Qin H.; Jiang J.; Miao L.; Jiang K.; Wang P.; Dai M.; Chu J.

通讯作者地址:Wang, P.; Institute of Circuits and Systems, Ningbo UniversityChina; 电子邮件: Wangpengjun@nbu.edu.cn

作者机构:[Wang, W] Institute of Circuits and Systems, Ningbo University, Ningbo, China, Ningbo Institute of Materials Technology and Engineering, Chinese Acade 更多

来源:Microelectronics Reliability,2016,67

收录类别:SCOPUS

资源类型:外文期刊论文

9. Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion SCIE

作者:Sun, YB; Fu, J; Xu, J; Wang, YD; Zhou, W; Zhang, W; Cui, J; Li, GQ; Liu, ZH

通讯作者地址:Sun, YB (reprint author), Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China.

作者机构:[Sun, Yabin; Fu, Jun; Xu, Jun; Wang, Yudong; Zhou, Wei; Zhang, Wei; Cui, Jie; Li, Gaoqing; Liu, Zhihong] Tsinghua Univ, Inst Microelect, Tsinghua Natl 更多

来源:MICROELECTRONICS RELIABILITY,2014,54,12,2728-2734

收录类别:SCIE

当年影响因子:1.371

资源类型:外文期刊论文

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