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7. First-principles study of the magnetism of Ni-doped MoS2 monolayer SCOPUS SCIE EI

作者:Luo, M;Shen, YH;Chu, JH

通讯作者地址:Luo, M (reprint author), Shang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R China.

作者机构:[Luo, Min] Shang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R China.; [Shen, Yu Hao; Chu, Jun Hao] East China Normal Univ, Key La 更多

来源:JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55,9

收录类别:SCOPUS;SCIE;EI

当年影响因子:1.384

WOS被引:4

Scopus被引:5

资源类型:外文期刊论文

14. Effects of Gold Nanoparticles on Pentacene Organic Field-Effect Transistors SCIE

作者:Lee, K; Weis, M; Wei, OY; Taguchi, D; Manaka, T; Iwamoto, M

通讯作者地址:Lee, K (reprint author), Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, Japan.

作者机构:[Lee, Keanchuan; Wei Ou-Yang; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan. 更多

来源:JAPANESE JOURNAL OF APPLIED PHYSICS,2011,50,4

收录类别:SCIE

当年影响因子:1.384

WOS被引:3

资源类型:外文期刊论文

17. Transient Current Study on Pt/TiO2-x/Pt Capacitor SCIE

作者:Zhong, N; Shima, H; Akinaga, H

通讯作者地址:Zhong, N (reprint author), Natl Inst Adv Ind Sci & Technol, NIRC, Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan.

作者机构:[Zhong, Ni; Shima, Hisashi; Akinaga, Hiro] Natl Inst Adv Ind Sci & Technol, NIRC, Tsukuba, Ibaraki 3058568, Japan.; [Zhong, Ni; Shima, Hisashi; Akin 更多

来源:JAPANESE JOURNAL OF APPLIED PHYSICS,2010,49,4

收录类别:SCIE

当年影响因子:1.384

WOS被引:1

资源类型:外文期刊论文

18. Reduction of Hysteresis in Organic Field-Effect Transistor by Ferroelectric Gate Dielectric SCIE

作者:Chen, XY; Ou-Yang, W; Weis, M; Taguchi, D; Manaka, T; Iwamotoy, M

通讯作者地址:Chen, XY (reprint author), Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 O Okayama, Tokyo 1528552, Japan.

作者机构:[Chen, Xiangyu; Ou-Yang, Wei; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamotoy, Mitsumasa] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 更多

来源:JAPANESE JOURNAL OF APPLIED PHYSICS,2010,49,2

收录类别:SCIE

当年影响因子:1.384

WOS被引:12

资源类型:外文期刊论文

20. Tuning of Threshold Voltage in Organic Field-Effect Transistor by Dipole Monolayer SCIE

作者:Wei, OY; Chen, XY; Weis, M; Manaka, T; Iwamoto, M

通讯作者地址:Wei, OY (reprint author), Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 O Okayama, Tokyo 1528552, Japan.

作者机构:[Wei Ou-Yang; Chen, Xiangyu; Weis, Martin; Manaka, Takaaki; Iwamoto, Mitsumasa] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan.

来源:JAPANESE JOURNAL OF APPLIED PHYSICS,2010,49,4

收录类别:SCIE

当年影响因子:1.384

WOS被引:7

资源类型:外文期刊论文

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