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1. Effect of quantum dots on InAs/GaAs p-i-p quantum dots infrared photodetectors SCOPUS SCIE CPCI-S EI

作者:Zhang, B;Lu, HD;Guo, FM

通讯作者:Guo, F.M.(fmguo@ee.ecnu.edu.cn)

通讯作者地址:Guo, FM (reprint author), East China Normal Univ, Shanghai, Peoples R China.

作者机构:[Zhang, B.; Lu, H. D.; Guo, F. M.] East China Normal Univ, Shanghai, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2017,178,1,73-78

收录类别:SCOPUS;SCIE;CPCI-S;EI

当年影响因子:0.457

资源类型:外文期刊论文;外文会议论文

2. Photocurrent response in heterojunction photodiode with quantum dot-in-well SCOPUS SCIE CPCI-S EI

作者:Lu, HD;Guo, FM

通讯作者:Guo, F.M.(fmguo@ee.ecnu.edu.cn)

通讯作者地址:Guo, FM (reprint author), E China Normal Univ, Sch Informat Sci & Technol, Shanghai 200062, Peoples R China.

作者机构:[Lu, H. D.; Guo, F. M.] E China Normal Univ, Sch Informat Sci & Technol, Shanghai 200062, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2016,169,1,107-112

收录类别:SCOPUS;SCIE;CPCI-S;EI

当年影响因子:0.457

资源类型:外文期刊论文;外文会议论文

3. Low-light-level readout of a new quantum dots sensor at room temperature SCOPUS SCIE EI

作者:Wang, MJ;Guo, FM;Yue, FY;Shen, JH

通讯作者:Guo, F.M.(fmguo@ee.ecnu.edu.cn)

通讯作者地址:Wang, MJ; Guo, FM (reprint author), E China Normal Univ, Sch Informat Sci Technol, Shanghai 200062, Peoples R China.

作者机构:[Wang, M. J.; Guo, F. M.; Yue, F. Y.; Shen, J. H.] E China Normal Univ, Sch Informat Sci Technol, Shanghai 200062, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2016,171,1,152-159

收录类别:SCOPUS;SCIE;EI

当年影响因子:0.457

资源类型:外文期刊论文

4. Novel Photodetector Based on Lower Dimension and Nanostructure with Multiplication and Amplification SCOPUS SCIE EI CPCI-S

作者:Wang, MJ;Guo, FM;Zhang, SH

通讯作者:Guo, F.M.(fmguo@ee.ecnu.edu.cn)

通讯作者地址:Guo, FM (reprint author), E China Normal Univ, Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.

作者机构:[Wang, M. J.; Guo, F. M.; Zhang, S. H.] E China Normal Univ, Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2014,151,1,126-132

收录类别:SCOPUS;SCIE;EI;CPCI-S

当年影响因子:0.457

资源类型:外文期刊论文;外文会议论文

6. Nano-Device Modeling for Charge-Sensitive Infrared Photodetector Used in Very Long Wavelength and THz SCOPUS SCIE EI

作者:Fan, L;Ding, L;Weng, QC;Guo, FM

通讯作者:Guo, F.M.(fmguo@ee.ecnu.edu.cn)

通讯作者地址:Guo, FM (reprint author), E China Normal Univ, Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.

作者机构:[Fan, L.; Ding, L.; Weng, Q. C.; Guo, F. M.] E China Normal Univ, Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2013,145,1,88-93

收录类别:SCOPUS;SCIE;EI

当年影响因子:0.457

WOS被引:1

Scopus被引:1

资源类型:外文期刊论文

8. Effect of Sputtering Working Pressure on Microstructures and Properties of PZT Thin Films SCOPUS SCIE CPCI-S EI

作者:Zhang, XD;Lin, T;Meng, XJ;Sun, JL;Chu, JH;Park, S;Kwon, H;Hwang, J;Park, G

通讯作者:Zhang, X. D.(zxdnlipsitp@yahoo.com)

通讯作者地址:Zhang, XD (reprint author), Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China.

作者机构:[Zhang, X. D.; Lin, T.; Meng, X. J.; Sun, J. L.; Chu, J. H.] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peopl 更多

来源:INTEGRATED FERROELECTRICS,2009,113,1,31-40

收录类别:SCOPUS;SCIE;CPCI-S;EI

当年影响因子:0.457

资源类型:外文期刊论文;外文会议论文

9. NOVEL DEVICE DESIGN FOR AN ULTRASONIC RANGING SYSTEM SCIE

作者:Liao, WJ; Ren, TL; Yang, Y; Ren, Y; Kong, XM; Zhu, YP; Liu, LT

通讯作者地址:Ren, TL (reprint author), Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Ren, Tian-Ling] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China.; Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples 更多

来源:INTEGRATED FERROELECTRICS,2009,105,53-65

收录类别:SCIE;

当年影响因子:0.457

WOS被引:5

资源类型:外文期刊论文

10. DEVICE DESIGN FOR THE NOVEL HANDWRITING RECOGNITION SYSTEM SCIE

作者:Liao, WJ; Ren, TL; Yang, Y; Zhu, YP; Liu, LT

通讯作者地址:Liao, WJ (reprint author), Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Liao, Wen-jun] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China.; Tsinghua Natl Lab Informat Sci & Technol Beijing, Beijing 100084, 更多

来源:INTEGRATED FERROELECTRICS,2008,100,206-215

收录类别:;SCIE

当年影响因子:0.457

WOS被引:5

资源类型:外文期刊论文

11. The influence of dead layers on the voltage response of ferroelectric film infrared detectors SCIE

作者:Lin, T; Sun, JL; Meng, XJ; Ma, JH; Shi, FW; Chen, J; Chu, JH

通讯作者地址:Sun, JL (reprint author), Acad Sinica, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Yu Tian Rd 500, Shanghai 200083, Peoples R China.

作者机构:[Lin, T; Sun, JL; Meng, XJ; Ma, JH; Shi, FW; Chen, J; Chu, JH]Acad Sinica, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 20008 更多

来源:INTEGRATED FERROELECTRICS,2007,91,97-102

收录类别:SCIE

当年影响因子:0.457

资源类型:外文期刊论文

12. MEMS piezoelectric acoustic transducer SCIE

作者:Wu, XM; Yang, Y; Zhu, YP; Zhang, NX; Ren, TL; Liu, LT

通讯作者地址:Wu, XM (reprint author), Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Wu, XM; Yang, Y; Zhu, YP; Zhang, NX; Ren, TL; Liu, LT]Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2007,89,150-159

收录类别:;SCIE

当年影响因子:0.457

WOS被引:2

资源类型:外文期刊论文

13. Fabrication and characterization of in-plane polarized PZT films with interdigital electrodes SCIE

作者:Wang, C; Ren, TL; Wang, ZY; Zhu, YP; Zhang, NX; Lin, LT

通讯作者地址:Wang, C (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Wang, C; Ren, TL; Wang, ZY; Zhu, YP; Zhang, NX; Lin, LT]Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2007,88,3-11

收录类别:;SCIE

当年影响因子:0.457

WOS被引:1

资源类型:外文期刊论文

14. Effect of annealing temperature on properties of sputtered PZT thin films SCIE

作者:Zhu, YP; Ren, TL; Zhang, NX; Liu, LT; Li, ZJ

通讯作者地址:Zhu, YP (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Zhu, YP; Ren, TL; Zhang, NX; Liu, LT; Li, ZJ]Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2007,90,3-11

收录类别:SCIE

当年影响因子:0.457

WOS被引:1

资源类型:外文期刊论文

15. Directivity optimization of PZT based microspeaker array SCIE

作者:Zhu, YP; Ren, TL; Yang, Y; Wu, XM; Zhang, NX; Liu, LT; Li, ZJ

通讯作者地址:Zhu, YP (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Zhu, YP; Ren, TL; Yang, Y; Wu, XM; Zhang, NX; Liu, LT; Li, ZJ]Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2007,89,20-28

收录类别:SCIE

当年影响因子:0.457

WOS被引:2

资源类型:外文期刊论文

16. Low-temperature preparation of Pb(ZrxTi1-x)O-3 thin film SCIE

作者:Zhang, XD; Meng, XJ; Sun, JL; Wang, GS; Lin, T; Chu, JH

通讯作者地址:Zhang, XD (reprint author), Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China.

作者机构:[Zhang, XD; Meng, XJ; Sun, JL; Wang, GS; Lin, T; Chu, JH]Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, 更多

来源:INTEGRATED FERROELECTRICS,2006,81,123-128

收录类别:SCIE

当年影响因子:0.457

WOS被引:3

资源类型:外文期刊论文

17. Micro acoustic devices using piezoelectric films SCIE

作者:Ren, TL; Zhu, YP; Yang, Y; Wu, XM; Zhang, NX; Liu, LT; Li, ZJ

通讯作者地址:Ren, TL (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Ren, TL; Zhu, YP; Yang, Y; Wu, XM; Zhang, NX; Liu, LT; Li, ZJ]Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2006,80,331-340

收录类别:;SCIE

当年影响因子:0.457

WOS被引:10

资源类型:外文期刊论文

18. Uniformity improvement of PZT based ultrasonic transducer SCIE

作者:Zhu, YP; Ren, TL; Yang, Y; Wu, XM; Zhang, NX; Liu, LT; Li, ZJ

通讯作者地址:Zhu, YP (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Zhu, YP; Ren, TL; Yang, Y; Wu, XM; Zhang, NX; Liu, LT; Li, ZJ]Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2006,80,373-381

收录类别:SCIE

当年影响因子:0.457

WOS被引:4

资源类型:外文期刊论文

19. PMUTs for handwriting recognition SCIE

作者:Yang, Y; Ren, TL; Zhu, YP; Wu, XM; Zhang, NX; Liu, LT

通讯作者地址:Yang, Y (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Yang, Y; Ren, TL; Zhu, YP; Wu, XM; Zhang, NX; Liu, LT]Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2005,69,341-+

收录类别:;SCIE

当年影响因子:0.457

WOS被引:2

资源类型:外文期刊论文

20. Size and boundary effect in ferroelectric thin film for integrated passive components for RF communication SCIE

作者:Zhang, NX; Yang, Y; Zhu, YP; Ren, TL; Liu, LT

通讯作者地址:Zhang, NX (reprint author), Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

作者机构:[Zhang, NX; Yang, Y; Zhu, YP; Ren, TL; Liu, LT]Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China.

来源:INTEGRATED FERROELECTRICS,2005,77,165-172

收录类别:;SCIE

当年影响因子:0.457

资源类型:外文期刊论文

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