标题:Influence of experimental environment on the process of photo-assisted electrochemical etching process on silicon
作者:Chen, Y[1];Guo, PS[1];Wang, LW[1]
作者全称:Chen, Y[1];Guo, PS[1];Wang, LW[1]
通讯作者:Wang, L.(lwwang@ee.ecnu.edn.cn)
通讯作者地址:Wang, LW (reprint author), E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China.
出版年:2004
卷:5774
页码:575-578
关键词:Deep hole; Deep trench; DRIE; Electrochemical etching; Macroporous silicon; PAECE; Photonic crystal
摘要:Photo-assisted electrochemical etching is a newly developed technology for the deep etching process in silicon((1)). The principle for such a process 更多
收录类别:SCOPUS;CPCI-S;EI
资源类型:外文期刊论文;外文会议论文
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