标题:Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering
作者:Peng, Y[1,2];Miao, L[1];Li, C[3];Huang, R[3];Urushihara, D[4];Asaka, T[4];Nakatsuka, O[2];Tanemura, S[1]
作者全称:Peng, Ying[1,2];Miao, Lei[1];Li, Chao[3];Huang, Rong[3];Urushihara, Daisuke[4];Asaka, Toru[4];Nakatsuka, Osamu[2];Tanemura, Sakae[1]
通讯作者地址:Miao, L (reprint author), Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guangxi Collaborat Innovat Ctr Struct & Property, Guilin 541004, Guangxi, Peoples R China.; Nakatsuka, O (reprint author), Nagoya Univ, Grad Sch Engn, Dept Mat Phys, Nagoya, Aichi 4648603, Japan.
出版年:2018
卷:57
期:1
摘要:The use of nanostructured thermoelectric materials that can effectively reduce the lattice conductivity with minimal effects on electrical properties 更多
收录类别:SCIE;SCOPUS
当年影响因子:1.384
5年影响因子:0.992
JCR分区:Q3
资源类型:外文期刊论文
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版本类型: 出版稿
开放类型: 开放获取
使用许可: CC BY-NC-SA

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