标题:High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes
作者:Meng, QQ[1];Wang, H[1,3];Liu, CY[1];Guo, X[1];Gao, JJ[2];Ang, KS[1]
作者全称:Meng, Qianqian[1];Wang, Hong[1,3];Liu, Chongyang[1];Guo, Xin[1];Gao, Jianjun[2];Ang, Kian Siong[1]
通讯作者:Wang, Hong(ewanghong@ntu.edu.sg)
通讯作者地址:Wang, H (reprint author), Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore.; Wang, H (reprint author), Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
出版年:2017
卷:5
期:1
页码:40-44
关键词:3-dB bandwidth; Dipole-doped structure; high responsivity; high speed; uni-traveling-carrier photodiode (UTC-PD)
摘要:In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and hig 更多
收录类别:SCOPUS;SCIE;CPCI-S;EI
当年影响因子:3.141
5年影响因子:2.848
JCR分区:Q1
资源类型:外文期刊论文;外文会议论文
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使用许可: CC BY-NC-SA
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