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已选条件: 刊名: FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS × 资源类型: 外文会议论文 ×
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1. Structural and electrical properties of high kappa Al2O3-ZrO2 gate dielectrics on SOI substrate SCOPUS CPCI-S EI

作者:Ding, YF;Ye, GS;Zhang, NL;Zhu, M;Lin, CL;Zhu, ZQ

通讯作者:Ding, Y.F.

通讯作者地址:Ding, YF (reprint author), E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China.

作者机构:[Ding, YF; Ye, GS; Zhang, NL; Zhu, M; Lin, CL; Zhu, ZQ]E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China.

来源:FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS,2004,5774,646-650

收录类别:SCOPUS;CPCI-S;EI

资源类型:外文期刊论文;外文会议论文

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