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1. Field emission characteristics of nodular carbon nanotubes SCOPUS SCIE CPCI-S EI

作者:Li, Q;Xu, JF;Yu, K;Zhu, ZQ;Feng, T;Wang, X;Liu, XH;Kang, WP;Davidson, JL

通讯作者:Li, Q.(xujingf@sh163.net)

通讯作者地址:Li, Q (reprint author), E China Normal Univ, Dept Elect Sci & Technol, Shanghai 200062, Peoples R China.

作者机构:[Li, Q; Xu, JF; Yu, K; Zhu, ZQ; Feng, T; Wang, X; Liu, XH; Kang, WP; Davidson, JL]E China Normal Univ, Dept Elect Sci & Technol, Shang 更多

来源:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2003,21,4,1684-1687

收录类别:SCOPUS;SCIE;CPCI-S;EI

当年影响因子:1.573

WOS被引:5

Scopus被引:5

资源类型:外文期刊论文;外文会议论文

3. Field emitter using multiwalled carbon nanotubes grown on the silicon tip region by microwave plasma-enhanced chemical vapor deposition SCOPUS SCIE CPCI-S EI

作者:Wong, YM;Kang, WP;Davidson, JL;Wisitsora-at, A;Soh, KL;Fisher, TS;Li, Q;Xu, JF

通讯作者:Kang, W.P.(wkang@vuse.vanderbilt.edu)

通讯作者地址:Wong, YM (reprint author), Vanderbilt Univ, Dept Elect & Comp Engn, 221 Kirkland Hall, Nashville, TN 37235 USA.

作者机构:[Wong, YM; Kang, WP; Davidson, JL; Wisitsora-at, A; Soh, KL; Fisher, TS; Li, Q; Xu, JF]Vanderbilt Univ, Dept Elect & Comp Engn, Nashvill 更多

来源:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2003,21,1,391-394

收录类别:SCOPUS;SCIE;CPCI-S;EI

当年影响因子:1.573

WOS被引:9

资源类型:外文期刊论文;外文会议论文

5. ZnO : Zn phosphor thin films prepared by filtered arc deposition SCOPUS SCIE CPCI-S

作者:Li, W;Mao, DS;Zhang, FM;Wang, X;Liu, XH;Zou, SC;Zhu, YK;Li, Q;Xu, JF

通讯作者地址:Li, W (reprint author), Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China.

作者机构:[Li, W; Mao, DS; Zhang, FM; Wang, X; Liu, XH; Zou, SC; Zhu, YK; Li, Q; Xu, JF]Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shang 更多

来源:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2001,19,3,1004-1007

收录类别:SCOPUS;SCIE;CPCI-S

当年影响因子:1.573

WOS被引:3

Scopus被引:3

资源类型:外文期刊论文;外文会议论文

6. Subvolt turn-on voltage self-align gate diamond emitter fabricated by self-align-gate-sharpened molding technique SCIE CPCI-S

作者:Kang, WP;Wisitsora-at, A;Davidson, JL;Howell, M;Kerns, DV;Li, Q;Xu, F

通讯作者地址:Kang, WP (reprint author), Vanderbilt Univ, Dept Elect & Comp Engn, 221 Kirkland Hall, Nashville, TN 37235 USA.

作者机构:[Kang, WP; Wisitsora-at, A; Davidson, JL; Howell, M; Kerns, DV; Li, Q; Xu, F]Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 更多

来源:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1999,Vol.17,Issue.2,740-743

收录类别:SCIE;CPCI-S

会议时间:JUL 19-23, 1998

会议名称:11th International Vacuum Microelectronics Conference (IVMC 98)

WOS被引:12

资源类型:外文会议论文

9. Physical characterization of diamond pyramidal microtip emitters SCIE CPCI-S

作者:Kang, WP;Davidson, JL;George, MA;Milosavljevic, I;Li, Q;Xu, JF;Kerns, DV

通讯作者地址:Kang, WP (reprint author), VANDERBILT UNIV,DEPT ELECT & COMP ENGN,NASHVILLE,TN 37235, USA.

作者机构:[Kang, WP; Davidson, JL; George, MA; Milosavljevic, I; Li, Q; Xu, JF; Kerns, DV]FISK UNIV,NASHVILLE,TN 37208.;[Kang, WP; Davidson, JL; 更多

来源:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1997,Vol.15,Issue.2,460-463

收录类别:SCIE;CPCI-S

会议时间:JUL 07-12, 1996

会议名称:9th International Vacuum Microelectronics Conference(IVMC'96)

WOS被引:21

资源类型:外文会议论文

10. Micropatterned polycrystalline diamond field emitter vacuum diode arrays SCOPUS SCIE CPCI-S

作者:Kang, WP;Davidson, JL;Howell, M;Bhuva, B;Kinser, DL;Kerns, DV;Li, Q;Xu, JF

通讯作者地址:Kang, WP (reprint author), VANDERBILT UNIV,DEPT APPL & ENGN SCI,NASHVILLE,TN 37235, USA.

作者机构:[Kang, WP; Davidson, JL; Howell, M; Bhuva, B; Kinser, DL; Kerns, DV; Li, Q; Xu, JF]E CHINA NORMAL UNIV,SHANGHAI 200062,PEOPLES R CHINA.

来源:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1996,14,3,2068-2071

收录类别:SCOPUS;SCIE;CPCI-S

当年影响因子:1.573

WOS被引:61

Scopus被引:67

资源类型:外文期刊论文;外文会议论文

11. Instability and reliability of silicon field emission array SCOPUS SCIE CPCI-S

作者:Li, Q; Xu, JF; Song, HB; Liu, XF; Kang, WP

通讯作者地址:Li, Q (reprint author), E CHINA NORMAL UNIV,DEPT ELECT SCI & TECHNOL,SHANGHAI 200062,PEOPLES R CHINA.

作者机构:[Li, Q; Xu, JF; Song, HB; Liu, XF; Kang, WP]VANDERBILT UNIV,DEPT ELECT & COMP ENGN,NASHVILLE,TN 37235.

来源:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1996,14,3,1889-1894

收录类别:SCOPUS;SCIE;CPCI-S

当年影响因子:1.573

WOS被引:8

Scopus被引:9

资源类型:外文期刊论文;外文会议论文

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