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2. Near Field Properties of Monolayers of Colloidal Polystyrene Microspheres on Silicon SCOPUS SCIE CPCI-S EI

作者:Huang, SM;Wang, ZA;Sun, Z;Wang, ZB;Luk'yanchuk, B

通讯作者:Huang, S. M.(smhuang@phy.ecnu.edu.cn)

通讯作者地址:Huang, SM (reprint author), E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, N Zhongshan Rd 3663, Shanghai 200062, Peoples R China.

作者机构:[Huang, S. M.] E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Shanghai 200062, Peoples R China.

来源:INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010,322-323

收录类别:SCOPUS;SCIE;CPCI-S;EI

资源类型:外文期刊论文;外文会议论文

3. Investigation of Inner Surface of Silicon Microchannels Fabricated by Electrochemical Method CPCI-S

作者:Ci, PL;Shi, J;Sun, L;Liu, T;Wang, LW;Chu, PK

通讯作者地址:Wang, LW (reprint author), E China Normal Univ, Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.

作者机构:[Ci, Pengliang; Shi, Jing; Sun, Li; Liu, Tao; Wang, Lianwei] E China Normal Univ, Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R Chi 更多

来源:INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010,396-397

收录类别:CPCI-S

会议时间:JAN 03-08, 2010

会议名称:3rd IEEE International Nanoelectronics Conference

资源类型:外文会议论文

4. Graphene Nanosheet Counter-Electrodes for Dye-Sensitized Solar Cells SCIE CPCI-S

作者:Zhang, DW;Li, XD;Chen, S;Li, HB;Sun, Z;Yin, XJ;Huang, SM

通讯作者地址:Huang, SM (reprint author), E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, N Zhongshan Rd 3663, Shanghai 200062, Peoples R China.

作者机构:[Huang, S. M.] E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Shanghai 200062, Peoples R China.

来源:INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010,610-611

收录类别:SCIE;CPCI-S

会议时间:JAN 03-08, 2010

会议名称:3rd IEEE International Nanoelectronics Conference

WOS被引:4

资源类型:外文会议论文

5. Near Field Properties of Monolayers of Colloidal Polystyrene Microspheres on Silicon CPCI-S

作者:Huang, SM;Wang, ZA;Sun, Z;Wang, ZB;Luk'yanchuk, B

通讯作者地址:Huang, SM (reprint author), E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, N Zhongshan Rd 3663, Shanghai 200062, Peoples R China.

作者机构:[Huang, S. M.] E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Shanghai 200062, Peoples R China.

来源:INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010,322-323

收录类别:CPCI-S

会议时间:JAN 03-08, 2010

会议名称:3rd IEEE International NanoElectronics Conference (INEC)/Symposium on; Nanoscience and Nanotechnology in China

资源类型:外文会议论文

7. Numerical Modeling of the CIGS Thin Film Solar Cell with Varied Defect Density and Ga Content CPCI-S

作者:Zhou, MC;Ye, H;Fu, Y;Xiong, DY;Guo, FM

通讯作者地址:Guo, FM (reprint author), E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai, Peoples R China.

作者机构:[Zhou, Minchao; Ye, Hao; Fu, Yong; Xiong, Dayuan; Guo, Fangmin] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai, Peoples R Chi 更多

来源:INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010,277-278

收录类别:CPCI-S

会议时间:JAN 03-08, 2010

会议名称:3rd IEEE International Nanoelectronics Conference

资源类型:外文会议论文

9. Spin-related phenomena in nano-structure of semiconductors SCIE CPCI-S

作者:Chu, JH

通讯作者地址:Chu, JH (reprint author), E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China.

作者机构:[Chu, JH]E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China.

来源:INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010,9-11

收录类别:SCIE;CPCI-S

会议时间:JAN 03-08, 2010

会议名称:3rd IEEE International Nanoelectronics Conference

资源类型:外文会议论文

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