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4. Capacitance-voltage characteristics of Pt/Bi2VO5.5/p-Si structures SCOPUS SCIE EI

作者:Zhang, ZL;Deng, HM;Yang, PX

通讯作者:Yang, P.(pxyang@ee.ecnu.edu.cn)

通讯作者地址:Yang, PX (reprint author), E China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, 500 Dongchuan Rd, Shanghai 200241, Peoples R China.

作者机构:[Zhang, Zhenlun; Yang, Pingxiong] E China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China.; [Den 更多

来源:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2011,22,5,488-491

收录类别:SCOPUS;SCIE;EI

当年影响因子:2.019

WOS被引:2

Scopus被引:2

资源类型:外文期刊论文

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