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1. Comparative modelling and verification of Pthreads and Dthreads SCOPUS

作者:Fei Y.;Zhu H.;Wu X.;Fang H.;Qin S.

通讯作者地址:Zhu, H.; Shanghai Key Laboratory of Trustworthy Computing, MOE International Joint Laboratory of Trustworthy Software, International Research Center of Trustworthy Software, East China Normal UniversityChina; 电子邮件: hbzhu@sei.ecnu.edu.cn

作者机构:[Fei, Y] Shanghai Key Laboratory of Trustworthy Computing, MOE International Joint Laboratory of Trustworthy Software, International Research Center o 更多

来源:Journal of Software: Evolution and Process,2018,30,3

收录类别:SCOPUS

资源类型:外文期刊论文

20. Gate-to-source/drain fringing capacitance model with process variation of MOSFET in 40nm generation SCOPUS

作者:Ren J.;Sun L.;Zheng F.;Sun Y.;Li X.;Shi Y.

作者机构:[Ren, J] Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electrical Engineering, East China Normal University, Shang 更多

来源:2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings,2017,808-810

收录类别:SCOPUS

资源类型:外文期刊论文

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